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BYV12...BYV16
Vishay Telefunken
Fast Silicon Mesa Rectifiers
Features
D D D D
Glass passivated junction Hermetically sealed package Soft recovery characteristic Low reverse current
Applications
Fast rectifier and switch for example for TV-line output circuits and switch mode power supply
94 9539
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Test Conditions Type BYV12 BYV13 BYV14 BYV15 BYV16 Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM IFRM IFAV Tj=Tstg Value 100 400 600 800 1000 40 9 1.5 -65...+175 Unit V V V V V A A A C
Peak forward surge current Repetitive peak forward current Average forward current Junction and storage temperature range
tp=10ms, half sinewave =180, Tamb=25C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions l=10mm, TL=constant on PC board with spacing 25mm Symbol RthJA RthJA Value 45 100 Unit K/W K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current Reverse recovery time Reverse recovery charge Test Conditions IF=1A VR=VRRM VR=VRRM, Tj=150C IF=0.5A, IR=1A, iR=0.25A IF=1A, di/dt=5A/ms Type Symbol VF IR IR trr Qrr Min Typ 1 60 Max 1.5 5 150 300 200 Unit V
mA mA
ns nC
Document Number 86039 Rev. 2, 24-Jun-98
www.vishay.de * FaxBack +1-408-970-5600 1 (4)
BYV12...BYV16
Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified)
R thJA - Therm. Resist. Junction / Ambient ( K/W ) 120 T j - Junction Temperature ( C ) l 100 80 60 40 20 0 0 5 10 15 20 25 30
94 9517
240 l RthJA=100K/W 200 VR RM 160 BYV12 120 BYV14 80 BYV13 40 0 1000 0 200 400 600 800 VR,VRRM - Reverse / Repetitive Peak Reverse Voltage ( V ) BYV15 BYV16 VR
TL=constant
94 9101
l - Lead Length ( mm )
Figure 1. Typ. Thermal Resistance vs. Lead Length
1.2 I FAV- Average Forward Current ( A )
Figure 4. Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage
1000 I R - Reverse Current ( mA )
1.0 0.8 0.6 0.4 0.2 0 0 40 80
VR RM fv20kHz RthJA PCB
v100K/W
Scattering Limit 100
10
1 VR = VR RM 0 40 80 120 160 200
0.1 120 160 200
94 9521
94 9519
Tamb - Ambient Temperature ( C )
Tj - Junction Temperature ( C )
Figure 2. Max. Average Forward Current vs. Ambient Temperature
I FAV- Average Forward Current ( A )
Figure 5. Reverse Current vs. Junction Temperature
100
2.0 1.6 1.2 0.8 0.4 0 0 40 80 120 160 200
94 9520
RthJA L=10mm
v45K/W
IF - Forward Current ( A )
VR RM fv20kHz
10
1
Tj = 175C
0.1
Tj = 25C
0.01 0 1 2 3 4 Tamb - Ambient Temperature ( C ) VF - Forward Voltage ( V )
94 9518
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 6. Max. Forward Current vs. Forward Voltage
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Document Number 86039 Rev. 2, 24-Jun-98
BYV12...BYV16
Vishay Telefunken
12 CD - Diode Capacitance ( pF ) 10 8 6 4 2 0 0.1
94 9523
f = 470kHz Tj = 25C 1 10 100
VR - Reverse Voltage ( V )
Figure 7. Typ. Diode Capacitance vs. Reverse Voltage
Z thp - Thermal Resistance for Pulse Cond. (K/W) 1000 VR RM= 1000 V RthJA=100K/W 100 Tamb= 25C Tamb= 45C 10 Tamb= 60C
Tamb= 70C 1 10-5 Tamb= 100C 10-4 10-3 10-2 10-1 100 101 100 101 IFRM - Repetitive Peak Forward Current ( A )
94 9522
tp - Pulse Length ( s )
Figure 8. Thermal Response
Dimensions in mm
3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5 g Cathode Identification
technical drawings according to DIN specifications 94 9538
0.82 max.
26 min.
4.2 max.
26 min.
Document Number 86039 Rev. 2, 24-Jun-98
www.vishay.de * FaxBack +1-408-970-5600 3 (4)
BYV12...BYV16
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de * FaxBack +1-408-970-5600 4 (4)
Document Number 86039 Rev. 2, 24-Jun-98

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